publication date : oct 2011 1 index mark [gate] 1 . 8 + / - 0 . 1 0 . 7 + / - 0 . 1 terminal no. (a)drain [output] (b)source [gnd] (c)gate [input] (d)source (b) (b) 0.95+/-0.2 2.6+/-0.2 4 . 2 + / - 0 . 2 5 . 6 + / - 0 . 2 7.0+/-0.2 (c) 0 . 6 5 + / - 0 . 2 (a) 8.0+/-0.2 6 . 2 + / - 0 . 2 notes: 1. ( ) typical value unit:mm (d) 0.2+/-0.05 top view side view bottom view side view ( 3 . 6 ) (4.5) s t a n d o f f = m a x 0 . 0 5 detail a detail a < silicon rf power mos fet ( discrete ) > rd 0 9 mu p 2 rohs compliance, silicon mosfet power transistor, 520mhz , 8 w description rd09mup2 is a mos fet type transistor specifically designed for uhf rf power amplifiers applications. features ? high power g ai n: pout> 8 w, gp> 10 db@vdd= 7.2 v,f= 520m hz ? high efficiency: 50 % min . (520mhz) ? integrated gate protection diode application for output stage of high power amplifiers in uhf band mobile radio sets. rohs compliant rd09mup2 is a rohs complian t product. roh s compliance is indicating by the letter ?g? after the lot marking. this product includes the lead in high melting temperature type solders. however, it is applicable to the following exceptions of rohs directions. 1.lead in high melting temperature type solders (i.e. tin - lead older alloys containing more than85% lead.) absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit vdss drain to source voltage vgs=0v 40 v vgss gate to source vol tage vds=0v - 5 to +10 v id drain current - 4.0 a pin input power zg=zl=50 ? 1.6 w pch channel dissipation tc=25 c 83 w t j junction temperature - 150 c tstg storage temperature - - 40 to +1 25 c rth j - c thermal resistance junction to case 1.5 c/ w schematic drawing note: above parameters are guaranteed independently. g s d
< silicon rf power mos fet ( discrete ) > rd0 9mup2 rohs compliance, silicon mosfet power transistor, 520mhz , 8 w publication date : oct 2011 2 electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =1 7 v, v gs =0v - - 10 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold voltage v ds =1 2 v, i ds =1ma 0.5 - 2.5 v pout output power 8 9 - w ? d drain efficiency f= 520 mhz , v dd = 7.2 v pin= 0.8w,idq=1.0a 50 - - % vswrt load vswr tolerance v dd =9.5v,po=8w( pin control ) f =520mhz,idq=1.0a,zg=50 ? load vswr=20:1(all phase) no destroy - note: above parameters, ratings, limits and conditions are subject to change.
< silicon rf power mos fet ( discrete ) > rd0 9mup2 rohs compliance, silicon mosfet power transistor, 520mhz , 8 w publication date : oct 2011 3 typical characteristics vds-ids characteristics 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 vds(v) i d s ( a ) ta =+ 25 c vgs=4.5v vgs=4.0v vgs=3.5v vgs=3.0v vgs-ids characteristics 0 2 4 6 8 0 1 2 3 4 vgs(v) i d s ( a ) , g m ( s ) ta =+ 25 c vds=10v ids gm vds vs. ciss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) c i s s ( p f ) ta =+ 25 c f=1mhz vds vs. crss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) c r s s ( p f ) ta =+ 25 c f=1mhz channel dissipation vs. ambient temperature 0 10 20 30 40 50 60 0 40 80 120 160 200 ambient temperature ta(deg:c.) c h a n n e l d i s s i p a t i o n p c h ( w ) , , , on pcb with termal sheet and heat-sink (size : 41 x 55mm, t=7.2 mm) *pcb: glass epoxy (size : 46.4 x 40.0mm, t=0.8 mm) thermal sheet: geltec cooh-4000(t=0.5mm) free air vds vs. coss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) c o s s ( p f ) ta =+ 25 c f=1mhz
< silicon rf power mos fet ( discrete ) > rd0 9mup2 rohs compliance, silicon mosfet power transistor, 520mhz , 8 w publication date : oct 2011 4 typical characteristics pin-po characteristics @f=520mhz 0 10 20 30 40 0 5 10 15 20 25 30 35 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 d ( % ) ta=+25c f=520mhz vdd=7.2v idq=1.0a po gp pin-po characteristics @f=520mhz 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 pin(w) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d ( % ) po d idd ta=25c f=520mhz vdd=7.2v idq=1.0a vdd-po characteristics @f=520mhz 0 5 10 15 20 4 6 8 10 12 vdd(v) p o ( w ) 0 3 5 8 10 i d d ( a ) po idd ta=25c f=520mhz pin=1.0w idq=1.0a zg=zi=50 ohm
< silicon rf power mos fet ( discrete ) > rd0 9mup2 rohs compliance, silicon mosfet power transistor, 520mhz , 8 w publication date : oct 2011 5 test circuit ( f=520mhz) 3mm 21mm 330pf 4.7k ohm c1 c2 47pf 3.5mm w w rd09mup2 520mhz 13mm 5mm vdd vgg rf-in rf-out 5pf 6mm l 5pf note boad material glass-epoxy substrate micro strip line width=1.3mm/50 ohm er:4.8 t=0.8mm w:line width=1.0mm l 24.9nh 6turns d:0.43mm 2.46 mm(outside diameter) c1 c2:2200 f 3mm 7mm 330pf 22 f 50v 33pf 5pf 19mm 19mm
< silicon rf power mos fet ( discrete ) > rd0 9mup2 rohs compliance, silicon mosfet power transistor, 520mhz , 8 w publication date : oct 2011 6 rd09mup2 s-parameter data (@vdd=7.2v, id=500ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.900 -175.7 4.425 75.0 0.016 -7.1 0.798 -173.9 120 0.901 -176.4 3.651 71.1 0.014 -8.2 0.804 -174.4 140 0.905 -176.7 3.056 67.4 0.014 -10.4 0.808 -174.9 160 0.908 -177.2 2.614 64.2 0.013 -10.9 0.812 -175.1 180 0.909 -177.5 2.273 61.4 0.013 -10.0 0.819 -175.2 200 0.912 -177.6 2.003 58.7 0.011 -8.4 0.830 -175.1 220 0.916 -178.0 1.787 55.9 0.011 -6.0 0.842 -175.3 240 0.918 -178.5 1.602 53.3 0.010 -4.1 0.851 -175.3 260 0.922 -178.7 1.442 50.6 0.010 -5.6 0.857 -175.8 280 0.923 -178.9 1.297 48.0 0.009 0.6 0.859 -176.1 300 0.928 -179.0 1.176 45.8 0.008 2.6 0.863 -176.3 320 0.930 -179.1 1.075 44.1 0.008 8.2 0.866 -176.8 340 0.933 -179.3 0.989 42.3 0.008 15.1 0.878 -177.1 360 0.936 -179.6 0.910 40.0 0.008 25.3 0.889 -177.4 380 0.937 179.9 0.841 37.9 0.007 27.2 0.895 -177.8 400 0.939 179.7 0.775 36.3 0.008 35.5 0.897 -178.1 420 0.939 179.3 0.718 34.7 0.008 40.1 0.899 -178.6 440 0.945 179.1 0.667 33.4 0.008 45.0 0.900 -178.8 460 0.947 178.9 0.622 32.1 0.009 51.3 0.906 -179.3 480 0.950 178.8 0.582 30.7 0.009 56.2 0.913 -179.5 500 0.952 178.7 0.548 29.2 0.010 56.9 0.919 179.8 520 0.950 178.3 0.513 28.0 0.011 59.9 0.921 179.6 540 0.952 178.1 0.480 26.8 0.012 64.2 0.924 179.0 560 0.953 177.6 0.455 25.7 0.012 67.0 0.925 178.8 580 0.953 177.2 0.427 24.4 0.012 66.6 0.924 178.6 600 0.956 177.0 0.402 23.7 0.014 68.9 0.928 178.2 620 0.957 177.0 0.383 23.2 0.014 70.7 0.933 177.7 640 0.961 176.9 0.362 22.1 0.015 70.9 0.937 177.3 660 0.957 176.8 0.344 21.3 0.015 72.1 0.939 177.0 680 0.961 176.5 0.326 20.4 0.016 72.0 0.936 176.7 700 0.962 176.2 0.311 19.5 0.017 74.3 0.937 176.4 720 0.960 176.0 0.298 19.0 0.018 74.2 0.937 176.1 740 0.962 175.5 0.283 18.6 0.019 74.5 0.938 175.8 760 0.963 175.3 0.269 17.5 0.019 74.9 0.943 175.5 780 0.963 175.2 0.259 17.2 0.020 74.1 0.944 175.0 800 0.964 175.0 0.247 16.9 0.021 72.8 0.949 174.7 820 0.962 175.0 0.237 16.5 0.022 75.4 0.946 174.7 840 0.964 174.7 0.230 15.8 0.022 75.1 0.946 174.5 860 0.965 174.5 0.220 16.2 0.023 76.0 0.944 174.1 880 0.965 174.1 0.211 15.4 0.024 75.8 0.948 173.8 900 0.962 173.8 0.202 15.1 0.025 75.0 0.949 173.4 920 0.967 173.5 0.193 15.0 0.026 75.8 0.952 172.8 940 0.963 173.5 0.189 14.4 0.026 75.8 0.952 172.7 960 0.964 173.2 0.180 13.8 0.027 75.6 0.949 172.7 980 0.966 173.1 0.176 14.6 0.028 76.0 0.951 172.6 1000 0.964 173.0 0.170 14.0 0.029 76.5 0.952 172.2 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > rd0 9mup2 rohs compliance, silicon mosfet power transistor, 520mhz , 8 w publication date : oct 2011 7 rd09mup2 s-parameter data (@vdd=7.2v, id=900ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.914 -176.9 4.363 78.5 0.012 0.2 0.825 -175.5 120 0.918 -177.4 3.638 74.9 0.012 -0.6 0.833 -176.2 140 0.920 -178.0 3.060 71.4 0.011 0.3 0.832 -177.1 160 0.922 -178.3 2.614 68.8 0.011 1.6 0.829 -177.3 180 0.921 -178.6 2.287 66.7 0.011 4.4 0.833 -177.4 200 0.921 -178.8 2.039 64.6 0.010 6.5 0.846 -177.2 220 0.922 -179.3 1.840 62.1 0.010 8.5 0.863 -177.4 240 0.925 -179.4 1.665 59.6 0.010 8.0 0.870 -177.5 260 0.924 -179.8 1.503 56.8 0.009 10.9 0.868 -177.9 280 0.928 180.0 1.364 54.7 0.009 13.1 0.864 -178.2 300 0.929 -180.0 1.240 52.9 0.009 18.6 0.860 -178.1 320 0.936 180.0 1.144 51.1 0.009 26.6 0.866 -178.4 340 0.935 179.8 1.064 49.4 0.009 27.8 0.879 -178.8 360 0.936 179.4 0.993 47.2 0.009 32.4 0.891 -179.0 380 0.937 179.0 0.923 45.2 0.009 34.4 0.896 -179.4 400 0.937 178.9 0.851 43.5 0.009 40.1 0.896 -179.7 420 0.939 178.5 0.795 41.7 0.009 47.0 0.895 -179.8 440 0.941 178.5 0.738 40.4 0.009 52.8 0.892 -180.0 460 0.944 178.3 0.696 39.3 0.010 50.3 0.898 179.6 480 0.946 178.1 0.654 38.0 0.011 56.9 0.908 179.3 500 0.948 178.0 0.619 36.5 0.011 59.5 0.912 178.8 520 0.950 177.9 0.585 34.8 0.012 62.7 0.914 178.4 540 0.949 177.5 0.549 33.5 0.012 63.1 0.915 178.1 560 0.948 177.1 0.518 32.2 0.014 63.6 0.916 178.0 580 0.950 177.0 0.491 31.1 0.014 65.6 0.918 177.8 600 0.952 176.6 0.467 30.3 0.014 66.3 0.919 177.6 620 0.954 176.5 0.444 29.5 0.015 67.6 0.924 177.0 640 0.958 176.5 0.426 28.5 0.016 69.8 0.930 176.4 660 0.954 176.4 0.400 27.2 0.017 69.8 0.932 176.3 680 0.957 176.3 0.382 26.3 0.017 70.8 0.929 176.0 700 0.956 176.0 0.367 25.6 0.018 71.9 0.929 175.9 720 0.955 175.5 0.350 24.9 0.019 72.4 0.931 175.8 740 0.956 175.2 0.334 23.9 0.019 72.5 0.930 175.3 760 0.959 174.9 0.319 23.4 0.020 73.0 0.934 174.8 780 0.958 175.0 0.308 22.3 0.021 72.7 0.939 174.5 800 0.959 174.8 0.293 22.0 0.021 74.0 0.944 174.3 820 0.962 174.8 0.281 21.5 0.022 73.9 0.939 174.1 840 0.962 174.5 0.271 21.0 0.023 74.2 0.938 174.0 860 0.961 174.3 0.261 20.4 0.023 74.1 0.939 173.9 880 0.960 174.0 0.252 20.0 0.025 73.9 0.940 173.4 900 0.961 173.6 0.244 19.5 0.025 74.6 0.942 173.0 920 0.961 173.3 0.233 18.9 0.026 74.4 0.944 172.5 940 0.960 173.3 0.225 18.5 0.027 74.7 0.945 172.3 960 0.962 173.1 0.219 18.2 0.027 74.7 0.945 172.3 980 0.962 172.9 0.211 17.5 0.029 74.3 0.948 172.4 1000 0.960 172.8 0.206 18.0 0.029 74.4 0.948 172.0 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > rd0 9mup2 rohs compliance, silicon mosfet power transistor, 520mhz , 8 w publication date : oct 2011 8 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > rd0 9mup2 rohs compliance, silicon mosfet power transistor, 520mhz , 8 w publication date : oct 2011 9 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give du e consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding t hese materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any product data, diagrams , charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http : //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semiconductor s are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? plea se contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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